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2SD1974
Silicon NPN Epitaxial
REJ03G0797-0200 (Previous ADE-208-1161) Rev.2.00 Aug.10.2005
Application
Low frequency power amplifier
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2
2, 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) ID
4
1
3
Note:
Marking is "ES". *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current ic (peak) E to C diode forward current ID Collector power dissipation PC*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 25 25 6 0.8 1.5 0.6 1.0 150 -55 to +150 Unit V V V A A A W C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1974
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1. Pulse test Symbol V(BR)CBO V(BR)CEO VCEO(sus) V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VD Min 25 25 25 6 -- -- -- 250 -- -- Typ -- -- -- -- -- -- -- -- -- -- Max -- 35 35 -- 0.2 0.5 0.2 1200 0.4 1.5 Unit V V V V A A A V V Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IC = 0.8 A, RBE = , L = 20 mH IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 IC = 0.8 A, IB = 80 mA*1 ID = 0.6 A*1
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1974
Main Characteristics
Maximum Collector Dissipation Curve Area of Safe Operation
10
Collector Power Dissipation PC (W) (on the alumina ceramic board)
1.2
Collector Current IC (A)
3 iC(peak) 1.0 IC(max) 0.3 0.1 0.03 0.01 0.01 Ta = 25C 1 Shot Pulse 0.3 1.0 3 10 30 100
PW =
0.8
10
1 m
D
m
s
C
s
O
pe
ra
tio
0.4
n
0
50
100
150
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V)
Area of Safe Operation of Emitter to Collector Diode
10 1.0 Ta = 25C 1 Shot Pulse
Typical Output Characteristics
Collector Current IC (A)
Diode Current ID (A)
8
0.8
1.8 1.6 1.4 1.2
1.0
0.8
6
0.6
4
0.4
0.6 0.4
2
0.2
0.2 mA
IB = 0 Ta = 25C
0 0.1
0.3
1.0
3
10
0
2
4
6
8
10
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Current
Typical Transfer Characteristics
1.0
Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V)
10 3 1.0 0.3 0.1
t)
Collector Current IC (A)
0.8
IC = 10 IB Ta = 25C Pulse
VBE(sat)
0.6
0.4 VCE = 2 V Ta = 25C Pulse 0.4 0.8 1.2 1.6 2.0
0.2
V CE
0.03 0.01 0.001 0.003 0.01 0.03
(sa
0
0.1
0.3
1.0
Base to Emitter Voltage VBE (V)
Collector Current IC (A)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD1974
DC Current Transfer Ratio vs. Collector Current
10,000 1.0 VCE = 2 V Pulse 25 Ta = 75C -25
Typical Characteristics of Emitter to Collector Diode
DC Current Transfer Ratio hFE
1,000 300 100 30
Diode Current ID (A)
3,000
0.8
0.6
0.4
0.2
Ta = 25C Pulse 0.4 0.8 1.2 1.6 2.0
10 0.001 0.003 0.01 0.03
0.1
0.3
1.0
0
Collector Current IC (A) Collector Output Capacitance vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
1,000 300 100 30 10 3 1 0.3 Ta = 25C f = 1 MHz IE = 0
Emitter to Collector Forward Voltage VD (V)
1.0
3
10
30
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD1974
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SD1974ESTL-E Quantity 1000 Shipping Container 178 mm Reel, 12 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
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Colophon .3.0

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